D965 340-600

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)  1.EMITTER FEATURES Audio Amplifier z z Flash Unit of Camera z Switching Circuit 2.COLLECTOR 3.BASE     z  Equivalent Circuit "#$                !  1  .  2  *"()" *340 *34$0!% *345$'  "#$ TO-92 Bulk 1000pcs/Bag "#$,*  *+,"- Tape  2000pcs/Box   !"#$%& + $ Collector-Base Voltage 42 V +,.  Collector-Emitter Voltage 22 V +.-  Emitter-Base Voltage 6 V ,  Collector Current -Continuous 5 A '()  +,-  *  ș 1  TJ,0  www.jscj-elec.com *"(" 750 Collector Power Dissipation  Thermal Resistance  rom Junction o Ambient  (##) Operation Junction and Storage Temperature Range 1 -55 &'($% mW  /W  Rev. - 2.0 .6., ,6,7 ,. , Ta =25  unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 42 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 22 V Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 A Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A hFE(1) VCE=2V, IC= 0.15 mA 150 hFE(2) VCE= 2V,IC = 500 mA 340 hFE(3) VCE=2V, IC = 2A 150 DC current gain Collector-emitter saturation voltage Transition frequency CLASSIFICATION OF VCE(sat) fT 2000 IC=3000mA,IB=100 mA VCE=6V, IC=50mA,f=30MHz 0.35 150 MHz hFE(2) Rank R T V Range 340-600 560-950 900-2000 www.jscj-elec.com V 2 Rev. - 2.0 Typical Characteristics hFE Static Characteristic IB=4mA 1800 COLLECTOR CURRENT IC (mA) 1500 COMMON EMITTER Ta=25ć IB=3.5mA IB=3mA 1600 IB=2mA 1200 1000 IB=1.5mA 800 600 IB=1mA Ta=25 ć 400 IB=0.5mA 200 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE VCEsat 1000 —— 9 8 VCE 100 0.15 10 1 10 100 COLLECTOR CURRENT (V) IC VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCE=2V IB=2.5mA 1400 IC —— Ta=100 ć 1000 DC CURRENT GAIN hFE 2000 100 Ta=100ć Ta=25ć 10 (mA) IC —— 1000 Ta=25ć Ta=100ć =30 =30 1 0.3 1 10 100 COLLECTOR CURRENT IC IC 100 0.3 5000 TRANSITION FREQUENCY fT (MHz) T= a 25 ć ć 1 200 400 600 800 BASE-EMMITER VOLTAGE 1000 Cob/ Cib —— VBE 1000 —— 1000 IC 5000 (mA) IC 100 10 VCE=6V Ta=25 ć VCE=2V 0 100 fT 1000 10 0.1 10 COLLECTOR CURRENT 1000 100 1 (mA) —— VBE T= a 10 0 COLLCETOR CURRENT IC (mA) 5000 1000 5000 1000 IC 1 1200 10 2 (mV) 100 COLLECTOR CURRENT VCB/ VEB PC 900 IC (mA) —— Ta COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) 800 Cib 100 Cob 10 f=1MHz IE=0/ IC=0 Ta=25 ć 1 0.1 1 REVERSE VOLTAGE www.jscj-elec.com 10 V 700 600 500 400 300 200 100 0 20 0 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (ć ) Rev. - 2.0 *340$$($ '() A A1 b c D D1 E e e1 L  h $($$$(" $ : 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 $($3! $ : 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 00%*%6' NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0